Alloy Semiconductor実験総括

DOI:10.15011//jasma.34.340110
Int. J. Microgravity Sci. Appl. 2017p340110
論文著者
稲富 裕光,早川 泰弘,岡野 泰則,石川 毅彦
所属組織
宇宙航空研究開発機構 宇宙科学研究所,総合研究大学院大学 宇宙科学専攻,静岡大学 電子工学研究所,大阪大学大学院 基礎工学研究科
要約
The purpose of “Alloy Semiconductor” experiment is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions. The temperature gradient furnace onboard “Kibo” is used for the growth of an InxGa1-xSb bulk crystal which is a potential substrate material of optoelectronic devices such as thermo-photo-voltaic cells and gas sensors, since the bang gap and the lattice constant of the crystals are tuned by adjusting the composition. The space experiment is briefly summarized in view of the past history from preparation for the flight.
Keyword(s)
Alloy semiconductor, InGaSb, ISS, Microgravity, Growth kinetics, Convection
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Received 15 November 2016, Accepted 14 December 2016, Published 31 January 2017

© The Japan Society of Microgravity Applicaiton

この投稿文は次の言語で読めます: 英語

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