Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors - Experiments at the International Space Station and on Earth-

Int. J. Microgravity Sci. Appl. 2017p340111
Yasuhuro HAYAKAWA, Velu NIRMAL KUMAR, Mukannan ARIVANANDHAN, Govindasamy RAJESH, Tadanobu KOYAMA, Yoshimi MOMOSE, Kaoruho SAKATA, Tetsuo OZAWA, Yasunori OKANO, and Yuko INATOMI
Research Institute of Electronics, Shizuoka University,Centre for Nanoscience and Technology, Anna University, Chemical System Engineering, University of Tokyo, Department of Electrical Engineering, Shizuoka Institute of Science and Technology,Graduate school of Engineering Science, Osaka University, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, School of Physical Sciences, SOKENDAI (The Graduate University for Advanced Studies)
The manuscript reviews the microgravity experiments carried out onboard the International Space Station (ISS) to study the effects of gravity and orientation on the dissolution and growth properties of InGaSb ternary alloys. To study the effect of gravity, similar growth experiments were conducted under microgravity and normal gravity conditions. The effect of orientation was studied by the growth of InGaSb from (111)A and (111)B faces of GaSb (Ga and Sb faces) under microgravity onboard the ISS. The experimental results revealed that the growth rate was higher with better quality of crystal under microgravity than normal gravity. A model was proposed to explain the higher dissolution of GaSb (111)B than (111)A direction under microgravity. The higher growth rate of InGaSb from GaSb (111)B was found to be because of its higher dissolution of GaSb(111)B feed.
InGaSb, crystal growth, gravity, crystal orientation, ISS

Received 3 November 2016, Accepted 14 December 2016, Published 31 January 2017

© The Japan Society of Microgravity Applicaiton

この投稿文は次の言語で読めます: Japanese