A Numerical Study on the Dissolution Process of InGaSb under Zero Gravity

DOI:10.15011//jasma.34.340206
Int. J. Microgravity Sci. Appl. 2017p340206
Author
X. JIN, T. YAMAMOTO, Y. TAKAGI, Y. OKANO, Y. INATOMI, Y. HAYAKAWA and S. DOST
Organization
Department of Materials Engineering Science, ISAS, Japan Aerospace Exploration Agency, School of Physical Sciences, SOKENDAI, Research Institute of Electronics, Shizuoka University, Crystal Growth Laboratory, University of Victoria
Abstract
InxGa1-xSb bulk crystals have been grown on the International Space Station using a GaSb (feed) / InSb / GaSb (seed) sandwich-structured sample. In order to gain a deeper insight into the transport phenomenon and the relevant fundamental mechanisms during the dissolution process of InGaSb in this system, four numerical simulations with different temperature conditions and under the assumption of zero gravity were performed by the volume-averaging continuum model. Simulation results showed the heat loss through the bottom wall did not affect the final feed/seed dissolution lengths and the grown crystal interface shape. The final dissolution lengths of the feed and seed crystals were determined by the temperature calculated along the seed interface. The results also indicate that the actual temperature of the growth ampoule should be around 3K lower than that measured on the outside the protective cartridge.
Keyword(s)
Crystal growth, InGaSb, Zero-gravity, Numerical simulation
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Received 17 November 2016, Accepted 27 February 2017, Published 30 April 2017

© The Japan Society of Microgravity Applicaiton

この投稿文は次の言語で読めます: Japanese

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