Numerical Study of Transport Phenomena During Bulk Single Crystal Growth under Microgravity Fields

Int. J. Microgravity Sci. Appl. 2013p002
Author
Youhei TAKAGI, Hisashi MINAKUCHI and Yasunori OKANO
Organization
Department of Materials Engineering Science, Osaka University, Department of Mechanical Systems Engineering, University of the Ryukyus
Abstract
Recent numerical studies by the authors concerning bulk single crystal growth under microgravity fields were reviewed. For the InGaSb alloy crystal growth by temperature gradient method, it was found that the growth rate was not affected by gravity level although the dissolution of GaSb seed crystal before growth process was enhanced by solutal natural convection under normal gravity field. For the Si/Ge alloy crystal growth by floating zone method, transport structure including wave number was changed by coexistence of solutal and thermal Marangoni convections. For the hydrothermal wave in a shallow annular melt, the combination of crucible rotation and magnetic field was efficient for suppression of unsteady transport phenomena even though weak external forces.
Keyword(s)
numerical simulation, crystal growth, Marangoni convection, hydrothermal wave, floating zone, space experiment
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